JYFL-ACCLAB-RADEF_2024-03 Temperature dependence of heavy ion radiation sensitivity of 2nd gen SiC power MOSFETs

Description

This dataset contains data of Xe-126 irradiation tests of 2nd gen. SiC MOSFETs (CPM2-1200-0080B) at different temperatures. Temperature dependence of leakage current degradation was observed.

Year of publication

2024

Authors

ETH Zurich

Martinella, Corinna - Creator

University of Jyväskylä - Rights holder, Publisher

Fysiikan laitos

Jaatinen, Jukka - Contributor

Rossi, Mikko - Contributor

Javanainen, Arto - Creator

Kettunen, Heikki - Creator

Niskanen, Kimmo - Creator

Vanderbilt University

Harris, Phoenix - Creator

Sengupta, Arijit - Creator

Witulski, Arthur - Creator

Other information

Fields of science

Physical sciences; Electronic, automation and communications engineering, electronics

Language

English

Open access

Embargo

License

Creative Commons Attribution 4.0 International (CC BY 4.0)

Keywords

heavy ion irradiation, silicon carbide

Subject headings

ionising radiation, power electronics