Application of ion implantation for microelectronics revolutionized the Si manufacturing industry by enabling the large-scale integration of circuits on a single chip. This allowed for development of cheap computers, internet, and worldwide telecommunication. However, in the modern era of emerging technologies the standard processing is not sufficient for new level of precision in dopant design. Recent experiments suggest the use of highly compressed but short ion beam pulses to enable control of dopant implantation in space and time. These unprecedented experiments open doors into a new physics of ion-solid interactions. In SPATEC, we will build a new multiscale computer simulation model to explain how the stochastic processes triggered by ion irradiation in close spatial and temporal vicinity can work together resulting in beneficial defect-healing and self-organization. The SPATEC findings will enable new exciting applications based on precise positioning of dopants in materials.

2022

2026