Unlocking non-equilibrium processes in resistive switching memory and selector devices (NoneqRSMSD)
Description of the granted funding
Advancements are needed to bring us to the next generation of memory technologies where computation speed meets energy efficiency in novel green-computing applications. This project aims to investigate the atomic-scale properties of resistive-switching memory materials under non-equilibrium conditions to tackle key fundamental challenges and technological issues, to obtain improved functional memory devices. Computational experiments of ion irradiation will be performed by utilizing machine-learned molecular-dynamics simulations and time-dependent density functional theory calculations to rationalize the semiconducting properties of these materials. The study will aim to unravel the origin of the nucleation mechanism in elemental chalcogenide selector devices, and optimize the switching process by tuning the structural phase of the material. The research will be carried out at the University of Turku with national (Aalto University) and international (Spain and UK) collaborations.
Show moreStarting year
2024
End year
2028
Granted funding
Funder
Research Council of Finland
Funding instrument
Academy research fellows
Decision maker
Scientific Council for Natural Sciences and Engineering
13.06.2024
13.06.2024
Other information
Funding decision number
364241
Fields of science
Materials engineering
Research fields
Funktionaaliset materiaalit, puolijohteet