High-<i>k</i> GaAs metal insulator semiconductor capacitors passivated by <i>ex-situ </i>plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
Year of publication
2012
Authors
Jussila, Henri; Mattila, Päivi; Oksanen, Jani; Perros, Alexander; Riikonen, Juha; Bosund, Markus; Varpula, Aapo; Huhtio, Teppo; Lipsanen, Harri; Sopanen, Markku
Organizations and authors
VTT Technical Research Centre of Finland Ltd
Varpula Aapo 
Aalto University
Perros Alexander
Lipsanen Harri
Jussila Henri
Oksanen Jani
Riikonen Juha
Sopanen Markku
Mattila Päivi
Huhtio Teppo
Publication type
Publication format
Article
Parent publication type
Journal
Article type
Original article
Audience
ScientificPeer-reviewed
Peer-ReviewedMINEDU's publication type classification code
A1 Journal article (refereed), original researchPublication channel information
Journal
Volume
100
Issue
7
Article number
071606
ISSN
Publication forum
Publication forum level
2
Open access
Open access in the publisher’s service
Yes
Open access of publication channel
Fully open publication channel
Self-archived
Yes
Other information
Fields of science
Physical sciences; Chemical sciences; Electronic, automation and communications engineering, electronics; Materials engineering; Nanotechnology; Medical biotechnology
Keywords
[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object]
Internationality of the publisher
International
Language
English
International co-publication
No
Co-publication with a company
Yes
DOI
10.1063/1.3687199
The publication is included in the Ministry of Education and Culture’s Publication data collection
Yes