Effect of atomic layer annealing in plasma-enhanced atomic layer deposition of aluminum nitride on silicon
Year of publication
2023
Authors
Seppänen, Heli; Prozheev, Igor; Kauppinen, Christoffer; Suihkonen, Sami; Mizohata, Kenichiro; Lipsanen, Harri
Abstract
<p>The effect of adding an atomic layer annealing step to a plasma-enhanced atomic layer deposition process of aluminum nitride was investigated with commonly available materials. The refractive index, crystallinity, stoichiometry, and impurity concentrations were studied from films grown from trimethylaluminum and ammonia precursors at 300 ° C on Si(111) substrates. Additional energy provided by the atomic layer annealing step during each deposition cycle was found to enhance the crystallinity and stoichiometry and increase the refractive index and film density. A polycrystalline hexagonal film with a weak c-axis orientation was obtained on substrates with and without native oxide, which is promising for applications that require high quality films at low temperatures.</p>
Show moreOrganizations and authors
Publication type
Publication format
Article
Parent publication type
Journal
Article type
Original article
Audience
ScientificPeer-reviewed
Peer-ReviewedMINEDU's publication type classification code
A1 Journal article (refereed), original researchPublication channel information
Parent publication name
Journal of Vacuum Science Technology A: Vacuum, Surfaces, and Films
Volume
41
Issue
5
Article number
052401
ISSN
Publication forum
Publication forum level
1
Open access
Open access in the publisher’s service
Yes
Open access of publication channel
Partially open publication channel
License of the publisher’s version
CC BY
Self-archived
Yes
Article processing fee (EUR)
2011
Year of payment for the open publication fee
2023
Other information
Fields of science
Physical sciences; Materials engineering; Nanotechnology
Keywords
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Internationality of the publisher
International
Language
English
International co-publication
No
Co-publication with a company
No
DOI
10.1116/6.0002705
The publication is included in the Ministry of Education and Culture’s Publication data collection
Yes