The impact of vacancy defects on CNT interconnects From statistical atomistic study to circuit simulations
Year of publication
2017
Authors
Lee, Jaehyun; Berrada, Salim; Liang, Jie; Sadi, Toufik; Georgiev, Vihar P.; Todri-Sanial, Aida; Kalita, Dipankar; Ramos, Raphael; Okuno, Hanako; Dijon, Jean; Asenov, Asen
Organizations and authors
Aalto University
Sadi Toufik 
Publication type
Publication format
Article
Parent publication type
Conference
Article type
Other article
Audience
ScientificPeer-reviewed
Peer-ReviewedMINEDU's publication type classification code
A4 Article in conference proceedingsPublication channel information
Parent publication name
2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017
Publisher
Article number
8085288
Pages
157-160
ISBN
Publication forum
Publication forum level
1
Open access
Open access in the publisher’s service
No
Self-archived
Yes
Other information
Fields of science
Computer and information sciences; Medical engineering
Keywords
[object Object],[object Object],[object Object],[object Object],[object Object],[object Object]
Internationality of the publisher
International
Language
English
International co-publication
Yes
Co-publication with a company
No
DOI
10.23919/SISPAD.2017.8085288
The publication is included in the Ministry of Education and Culture’s Publication data collection
Yes