Admittance memory cycles of Ta2O5-ZrO2-based RRAM devices
Year of publication
2017
Authors
Duenas, S.; Castan, H.; Ossorio, O. G.; Dominguez, L. A.; Gracia, H.; Kalam, K.; Kukli, K.; Ritala, M.; Leskelä, M.
Organizations and authors
Publication type
Publication format
Article
Parent publication type
Conference
Article type
Other article
Audience
ScientificPeer-reviewed
Peer-ReviewedMINEDU's publication type classification code
A4 Article in conference proceedingsPublication channel information
Parent publication name
2017 32ND CONFERENCE ON DESIGN OF CIRCUITS AND INTEGRATED SYSTEMS (DCIS)
Publisher
ISBN
Publication forum
Publication forum level
1
Open access
Open access in the publisher’s service
No
Self-archived
Yes
Other information
Fields of science
Physical sciences; Chemical sciences
Keywords
[object Object],[object Object],[object Object]
Publication country
United States
Internationality of the publisher
International
Language
English
International co-publication
Yes
Co-publication with a company
No
DOI
10.1109/DCIS.2017.8311627
The publication is included in the Ministry of Education and Culture’s Publication data collection
Yes