The Role of Defects in the Resistive Switching Behavior of Ta2O5-TiO2-Based Metal-Insulator-Metal (MIM) Devices for Memory Applications
Year of publication
2018
Authors
Duenas, S.; Castan, H.; Garcia, H.; Ossorio, O. G.; Dominguez, L. A.; Seemen, H.; Tamm, A.; Kukli, K.; Aarik, J.
Organizations and authors
University of Helsinki
Kukli K.
Publication type
Publication format
Article
Parent publication type
Journal
Article type
Original article
Audience
ScientificPeer-reviewed
Peer-ReviewedMINEDU's publication type classification code
A1 Journal article (refereed), original researchPublication channel information
Journal/Series
Parent publication name
Volume
47
Issue
9
Pages
4938-4943
ISSN
Publication forum
Publication forum level
1
Open access
Open access in the publisher’s service
No
Self-archived
No
Other information
Fields of science
Chemical sciences
Keywords
[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object]
Publication country
United States
Internationality of the publisher
International
Language
English
International co-publication
Yes
Co-publication with a company
No
DOI
10.1007/s11664-018-6105-0
The publication is included in the Ministry of Education and Culture’s Publication data collection
Yes