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The Role of Defects in the Resistive Switching Behavior of Ta2O5-TiO2-Based Metal-Insulator-Metal (MIM) Devices for Memory Applications

Year of publication

2018

Authors

Duenas, S.; Castan, H.; Garcia, H.; Ossorio, O. G.; Dominguez, L. A.; Seemen, H.; Tamm, A.; Kukli, K.; Aarik, J.

Organizations and authors

Publication type

Publication format

Article

Parent publication type

Journal

Article type

Original article

Audience

Scientific

Peer-reviewed

Peer-Reviewed

MINEDU's publication type classification code

A1 Journal article (refereed), original research

Publication channel information

Parent publication name

Journal of Electronic Materials

Volume

47

Issue

9

Pages

4938-4943

​Publication forum

60241

​Publication forum level

1

Open access

Open access in the publisher’s service

No

Self-archived

No

Other information

Fields of science

Chemical sciences

Keywords

[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object]

Publication country

United States

Internationality of the publisher

International

Language

English

International co-publication

Yes

Co-publication with a company

No

DOI

10.1007/s11664-018-6105-0

The publication is included in the Ministry of Education and Culture’s Publication data collection

Yes