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P-Channel GaN transistor based on p-GaN/AlGaN/GaN on Si

Year of publication

2019

Authors

Chowdhury, Nadim; Lemettinen, Jori; Xie, Qingyun; Zhang, Yuhao; Rajput, Nitul S.; Xiang, Peng; Cheng, Kai; Suihkonen, Sami; Then, Han Wui; Palacios, Tomas

Organizations and authors

Aalto University

Lemettinen Jori

Suihkonen Sami

Publication type

Publication format

Article

Parent publication type

Journal

Article type

Original article

Audience

Scientific

Peer-reviewed

Peer-Reviewed

MINEDU's publication type classification code

A1 Journal article (refereed), original research

Publication channel information

Journal

IEEE Electron Device Letters

Publisher

IEEE

Volume

40

Issue

7

Article number

8713471

Pages

1036-1039

ISSN

0741-3106

​Publication forum

57393

​Publication forum level

2

Open access

Open access in the publisher’s service

No

Self-archived

No

Other information

Fields of science

Electronic, automation and communications engineering, electronics

Keywords

[object Object],[object Object],[object Object],[object Object],[object Object]

Internationality of the publisher

International

Language

English

International co-publication

Yes

Co-publication with a company

Yes

DOI

10.1109/LED.2019.2916253

The publication is included in the Ministry of Education and Culture’s Publication data collection

Yes