Magnetically active vacancy related defects in irradiated GaN layers

Year of publication

2012

Authors

Kilanski, L.; Tuomisto, F.; Szymczak, R.; Kruszka, R.

Organizations and authors

Aalto University

Tuomisto Filip

Kilanski Lukasz

Publication type

Publication format

Article

Parent publication type

Journal

Article type

Original article

Audience

Scientific

Peer-reviewed

Peer-Reviewed

MINEDU's publication type classification code

A1 Journal article (refereed), original research

Publication channel information

Journal/Series

Applied Physics Letters

Publisher

American Institute of Physics

Volume

101

Issue

Article number

072102

Pages

1-3

ISSN

0003-6951

Publication forum

51518

Publication forum level

Open access

Open access in the publisher’s service

Yes

Open access of publication channel

Fully open publication channel

Self-archived

Yes

Other information

Fields of science

Physical sciences; Mechanical engineering; Environmental engineering; Nanotechnology

Keywords

[object Object],[object Object],[object Object]

Internationality of the publisher

International

Language

English

International co-publication

Yes

Co-publication with a company

DOI

10.1063/1.4745776

The publication is included in the Ministry of Education and Culture’s Publication data collection

Yes