Polarity dependent properties of GaN layers grown by hydride vapor phase epitaxy on GaN bulk crystals

Year of publication

2003

Authors

Tuomisto, F.; Suski, T.; Teisseyre, H.; Krysko, M.; Leszczynski, M.; Lucznik, B.; Grzegory, I.; Porowski, S.; Wasik, D.; Witowski, A.; Gebicki, W.; Hageman, P.; Saarinen, K.

Organizations and authors

Aalto University

Tuomisto Filip

Publication type

Publication format

Article

Parent publication type

Journal

Article type

Original article

Audience

Scientific

Peer-reviewed

Peer-Reviewed

MINEDU's publication type classification code

A1 Journal article (refereed), original research

Publication channel information

Journal/Series

Physica Status Solidi. B: Basic Research

Publisher

Wiley

Volume

240

Issue

Pages

289-292

ISSN

0370-1972

Publication forum

65011

Publication forum level

Open access

Open access in the publisher’s service

Self-archived

Other information

Keywords

[object Object],[object Object],[object Object]

Internationality of the publisher

International

Language

English

International co-publication

Yes

Co-publication with a company

DOI

10.1002/pssb.200303259

The publication is included in the Ministry of Education and Culture’s Publication data collection

Yes