On the formation of vacancy defects in III-nitride semiconductors

Year of publication

2012

Authors

Tuomisto, F.; Mäki, J.-M.; Rauch, C.; Makkonen, I.

Organizations and authors

Aalto University

Rauch Christian

Tuomisto Filip

Makkonen Ilja

Mäki Jussi-Matti

Publication type

Publication format

Article

Parent publication type

Journal

Article type

Original article

Audience

Scientific

Peer-reviewed

Peer-Reviewed

MINEDU's publication type classification code

A1 Journal article (refereed), original research

Publication channel information

Journal/Series

Journal of Crystal Growth

Publisher

Elsevier

Volume

350

Issue

Pages

93-97

Open access

Open access in the publisher’s service

Self-archived

Other information

Fields of science

Physical sciences; Mechanical engineering; Environmental engineering; Nanotechnology

Keywords

[object Object],[object Object],[object Object],[object Object],[object Object]

Internationality of the publisher

International

Language

English

International co-publication

Co-publication with a company

DOI

10.1016/j.jcrysgro.2011.12.031

The publication is included in the Ministry of Education and Culture’s Publication data collection

Yes