Rapid Thermal Annealing of Si(1-x)Ge(x) Layers Formed by Germanium Ion Implantation

Year of publication

1994

Authors

Xia, Z.; Saarilahti, J.; Ronkainen, H.; Eränen, S.; Suni, I.; Molarius, J.; Kuivalainen, P.; Ristolainen, E.; Tuomi, T.

Organizations and authors

Aalto University

Kuivalainen Pekka

Publication type

Publication format

Article

Parent publication type

Journal

Article type

Original article

Audience

Scientific

Peer-reviewed

Peer-Reviewed

MINEDU's publication type classification code

A1 Journal article (refereed), original research

Publication channel information

Journal/Series

Nuclear Instruments and Methods

Publisher

Elsevier

Issue

B 88

Pages

247-254

Open access

Open access in the publisher’s service

Self-archived

Other information

Keywords

[object Object],[object Object],[object Object],[object Object]

Internationality of the publisher

International

Language

English

International co-publication

Co-publication with a company

The publication is included in the Ministry of Education and Culture’s Publication data collection

Yes