Structural, electrical and optical properties of defects in Si-doped GaN grown by molecular beam epitaxy on HVPE GaN

Year of publication

2002

Authors

Laukkanen, P.; Lehkonen, S.; Uusimaa, P.; Pessa, M.; Oila, J.; Hautakangas, S.; Saarinen, K.; Likonen, J.; Keränen, J.

Organizations and authors

Aalto University

Publication type

Publication format

Article

Parent publication type

Journal

Article type

Original article

Audience

Scientific

Peer-reviewed

Peer-Reviewed

MINEDU's publication type classification code

A1 Journal article (refereed), original research

Publication channel information

Journal/Series

Journal of Applied Physics

Publisher

American Institute of Physics

Volume

Open access

Open access in the publisher’s service

Self-archived

Other information

Keywords

[object Object],[object Object]

Internationality of the publisher

International

Language

English

International co-publication

Co-publication with a company

The publication is included in the Ministry of Education and Culture’s Publication data collection

Yes