Interfacial oxide growth in silicon/high-k oxide interfaces: First principles modeling of the Si-HfO<sub>2</sub> interface

Year of publication

2006

Authors

Hakala, M. H.; Foster, A. S.; Gavartin, J.L.; Havu, P.; Puska, M. J.; Nieminen, R. M.

Organizations and authors

Aalto University

Foster Adam

Puska Martti

Hakala Mikko

Havu Paula

Nieminen Risto

Publication type

Publication format

Article

Parent publication type

Journal

Article type

Original article

Audience

Scientific

Peer-reviewed

Peer-Reviewed

MINEDU's publication type classification code

A1 Journal article (refereed), original research

Publication channel information

Journal/Series

Journal of Applied Physics

Publisher

American Institute of Physics

Volume

100

Issue

Article number

043708

Pages

1-7

Open access

Open access in the publisher’s service

Yes

Open access of publication channel

Fully open publication channel

Self-archived

Yes

Other information

Keywords

[object Object],[object Object]

Internationality of the publisher

International

Language

English

International co-publication

Yes

Co-publication with a company

DOI

10.1063/1.2259792

The publication is included in the Ministry of Education and Culture’s Publication data collection

Yes