GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride

Year of publication

2010

Authors

Bosund, M.; Mattila, P.; Aierken, A.; Hakkarainen, T.; Koskenvaara, H.; Sopanen, M.; Airaksinen, V.M.

Organizations and authors

Aalto University

Aierken Abuduwayiti

Koskenvaara Hannu

Sopanen Markku

Mattila Päivi

Publication type

Publication format

Article

Parent publication type

Journal

Article type

Original article

Audience

Scientific

Peer-reviewed

Peer-Reviewed

MINEDU's publication type classification code

A1 Journal article (refereed), original research

Publication channel information

Journal/Series

Applied Surface Science

Publisher

Elsevier

Volume

256

Issue

Pages

7434-7437

ISSN

0169-4332

Publication forum

51536

Publication forum level

Open access

Open access in the publisher’s service

Self-archived

Other information

Fields of science

Physical sciences; Chemical sciences; Electronic, automation and communications engineering, electronics; Materials engineering; Nanotechnology; Medical biotechnology

Keywords

[object Object],[object Object],[object Object],[object Object],[object Object]

Internationality of the publisher

International

Language

English

International co-publication

Co-publication with a company

DOI

10.1016/j.apsusc.2010.05.085

The publication is included in the Ministry of Education and Culture’s Publication data collection

Yes