Epitaxial lateral overgrowth of gallium arsenide studied by synchrotron topography
Year of publication
1999
Authors
Rantamäki, R.; Tuomi, T.; Zytkiewicz, Z.R.; Dobosz, D.; McNally, P.J.; Danilewsky, A.N.
Organizations and authors
Publication type
Publication format
Article
Parent publication type
Journal
Article type
Original article
Audience
ScientificPeer-reviewed
Peer-ReviewedMINEDU's publication type classification code
A1 Journal article (refereed), original researchPublication channel information
Publisher
Volume
570
Pages
181-186
ISSN
Publication forum
Publication forum level
1
Open access
Open access in the publisher’s service
No
Self-archived
No
Other information
Keywords
epitaxial; gallium arsenide; overgrown; synchrotron; X-ray topography
Internationality of the publisher
International
Language
English
International co-publication
No
Co-publication with a company
No
The publication is included in the Ministry of Education and Culture’s Publication data collection
Yes