Role of ALD Al2O3 Surface Passivation on the Performance of p-Type Cu2O Thin Film Transistors

Year of publication

2021

Authors

Napari, Mari; Huq, Tahmida N.; Meeth, David J.; Heikkilä, Mikko J.; Niang, Kham M.; Wang, Han; Iivonen, Tomi; Wang, Haiyan; Leskelä, Markku; Ritala, Mikko; Flewitt, Andrew J.; Hoye, Robert L. Z.; MacManus-Driscoll, Judith L.

Organizations and authors

University of Helsinki

Leskelä Markku

Ritala Mikko

Heikkilä Mikko J.

Iivonen Tomi

Publication type

Publication format

Article

Parent publication type

Journal

Article type

Original article

Audience

Scientific

Peer-reviewed

Peer-Reviewed

MINEDU's publication type classification code

A1 Journal article (refereed), original research

Publication channel information

Journal/Series

ACS Applied Materials & Interfaces

Parent publication name

ACS Applied Materials & Interfaces

Volume

Issue

Pages

4156-4164

ISSN

1944-8244

Publication forum

50178

Publication forum level

Open access

Open access in the publisher’s service

Open access of publication channel

Partially open publication channel

Self-archived

Yes

Other information

Fields of science

Physical sciences; Chemical sciences

Keywords

[object Object],[object Object],[object Object],[object Object],[object Object]

Publication country

United States

Internationality of the publisher

International

Language

English

International co-publication

Yes

Co-publication with a company

DOI

10.1021/acsami.0c18915

The publication is included in the Ministry of Education and Culture’s Publication data collection

Yes