Effect of InP passivation on carrier recombination in InGaAs/GaAs Surface Quantum Wells
Year of publication
1998
Authors
Lipsanen, Harri; Sopanen, Markku; Ahopelto, Jouni; Sandman, J.; Feldman, J.
Organizations and authors
VTT Technical Research Centre of Finland Ltd
Ahopelto Jouni
Publication type
Publication format
Article
Parent publication type
Conference
Article type
Other article
Audience
ScientificPeer-reviewed
Peer-ReviewedMINEDU's publication type classification code
A4 Article in conference proceedingsPublication channel information
Parent publication name
1998 International Conference on Indium Phosphide and Related Materials
Conference
10th International Conference on Indium Phosphide and Related Materials, IPRM 1998
Publisher
IEEE Institute of Electrical and Electronic Engineers
Pages
549-551
Open access
Open access in the publisher’s service
No information
Self-archived
No
Other information
Keywords
[object Object]
Language
English
International co-publication
No
Co-publication with a company
No
DOI
10.1109/ICIPRM.1998.712601
The publication is included in the Ministry of Education and Culture’s Publication data collection
No