Boron-implanted black silicon photodiode with close-to-ideal responsivity from 200 to 1000 nm

Year of publication

2023

Authors

Setälä, Olli; Chen, Kexun; Pasanen, Toni; Liu, Xiaolong; Radfar, Behrad; Vähänissi, Ville; Savin, Hele

Organizations and authors

Aalto University

Radfar Behrad

Savin Hele

Chen Kexun

Setälä Olli

Pasanen Toni

Vähänissi Ville

Liu Xiaolong

Publication type

Publication format

Article

Parent publication type

Journal

Article type

Original article

Audience

Scientific

Peer-reviewed

Peer-Reviewed

MINEDU's publication type classification code

A1 Journal article (refereed), original research

Publication channel information

Journal/Series

ACS Photonics

Publisher

AMERICAN CHEMICAL SOCIETY

Volume

Issue

Pages

1735-1741

ISSN

2330-4022

Publication forum

76837

Publication forum level

Open access

Open access in the publisher’s service

Yes

Open access of publication channel

Partially open publication channel

Self-archived

Yes

Other information

Fields of science

Nanotechnology

Keywords

[object Object],[object Object],[object Object],[object Object],[object Object]

Internationality of the publisher

International

Language

English

International co-publication

Co-publication with a company

DOI

10.1021/acsphotonics.2c01984

The publication is included in the Ministry of Education and Culture’s Publication data collection

Yes