Direct Band Gap Semiconductors with Two- and Three-Dimensional Triel-Phosphide Frameworks (Triel=Al, Ga, In)
Year of publication
2024
Authors
Restle, Tassilo M.F.; Zeitz, Sabine; Stanley, Philip M.; Karttunen, Antti J.; Meyer, Jan; Raudaschl-Sieber, Gabriele; Klein, Wilhelm; Fässler, Thomas F.
Organizations and authors
Aalto University
Karttunen Antti 
Publication type
Publication format
Article
Parent publication type
Journal
Article type
Original article
Audience
ScientificPeer-reviewed
Peer-ReviewedMINEDU's publication type classification code
A1 Journal article (refereed), original researchPublication channel information
Journal
Publisher
Volume
30
Issue
18
Article number
e202304097
ISSN
Publication forum
Publication forum level
2
Open access
Open access in the publisher’s service
Yes
Open access of publication channel
Partially open publication channel
Self-archived
Yes
Other information
Fields of science
Chemical sciences
Keywords
crystal structure; direct band gap; Indium; phosphide; SEMICONDUCTOR
Internationality of the publisher
International
Language
English
International co-publication
Yes
Co-publication with a company
No
DOI
10.1002/chem.202304097
The publication is included in the Ministry of Education and Culture’s Publication data collection
Yes