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New Insight into Single-Event Radiation Failure Mechanisms in Silicon Carbide Power Schottky Diodes and MOSFETs

Peer-reviewed
DOI
10.4028/www.scientific.net/MSF.1004.1066
Witulski, Arthur F.; Ball, Dennis R.; Johnson, Robert A.; Galloway, Kenneth F.; Sternberg, Andrew L....
Materials Science Forum2020Publications information icon

Synchrotron Topographic Study of Silicon Carbide

Tuominen, M.; Prieur, E.; Tuomi, T.; Koljonen, T.; Karilahti, M.
-1994Publications information icon

Epitaxial Silicon Carbide Grown on (100) Silicon Substrates by Molecular Beam Epitaxy

Airaksinen, V.-M.; Kaitila, J.; Niemi, H.; Lahtinen, J.; Saarilahti, J.
-1994Publications information icon

Synchrotron topographic study of 6H silicon carbide

Tuomi, T.; Prieur, E.; Koljonen, T.; Karilahti, M.; Tuominen, M.; Glass, R.; Janzen, E.
-1994Publications information icon

Thermodynamic considerations of the role of hydrogen in sublimation growth of silicon carbide

Peer-reviewed
Råback, P.; Nieminen, R.; Yakimova, R.; Tuominen, Marko; Janzen, E.
Journal of the Electrochemical Society1997Publications information icon

Growth of Silicon Carbide on (100) Silicon Substrates by Molecular Beam Epitaxy

Peer-reviewed
Airaksinen, V.-M.; Kaitila, J.; Niemi, H.; Lahtinen, J.; Saarilahti, J.
Physica Scripta1994Publications information icon

Graphene/SiC functionalization for blood type sensing applications

Peer-reviewed
DOI
10.4028/www.scientific.net/MSF.924.909
Lebedev, Sergey; Usikov, Alexander; Novikov, Sergey; Shabunina, Eugenia; Shmidt, Natalia; Barash, Io...
Materials Science Forum2018Publications information icon

Density functional theory calculation of the properties of carbon vacancy defects in silicon carbide

Peer-reviewed
Open access
DOI
10.1016/j.npe.2020.11.002
Wang, Xiuhong; Zhao, Junlei; Xu, Zongwei; Djurabekova, Flyura; Rommel, Mathias; Song, Ying; Fang, Fe...
Nami Jishu yu Jingmi Gongcheng = Nanotechnology and Precision Engineering2020Publications information icon

Graphene on silicon carbide as a basis for gas- and biosensor applications

Peer-reviewed
Open access
DOI
10.17586/2220-8054-2018-9-1-95-97
Lebedev, S. P.; Davydov, V. Yu; Usachov, D. Yu.; Smirnov, A. N.; Levitskii, V. S.; Eliseyev, I. A.; ...
Nanosystems: Physics, Chemistry, Mathematics2018Publications information icon

Antisites in silicon carbide

Peer-reviewed
Open access
DOI
10.1103/PhysRevB.57.6243
Torpo, L.; Pöykkö, S.; Nieminen, R.M.
Physical Review B1998

New Insight into Single-Event Radiation Failure Mechanisms in Silicon Carbide Power Schottky Diodes and MOSFETs

Peer-reviewed
DOI
10.4028/www.scientific.net/MSF.1004.1066
2020

Synchrotron Topographic Study of Silicon Carbide

1994

Epitaxial Silicon Carbide Grown on (100) Silicon Substrates by Molecular Beam Epitaxy

1994

Synchrotron topographic study of 6H silicon carbide

1994

Thermodynamic considerations of the role of hydrogen in sublimation growth of silicon carbide

Peer-reviewed
1997

Growth of Silicon Carbide on (100) Silicon Substrates by Molecular Beam Epitaxy

Peer-reviewed
1994

Graphene/SiC functionalization for blood type sensing applications

Peer-reviewed
DOI
10.4028/www.scientific.net/MSF.924.909
2018

Density functional theory calculation of the properties of carbon vacancy defects in silicon carbide

Peer-reviewed
Open access
DOI
10.1016/j.npe.2020.11.002
2020

Graphene on silicon carbide as a basis for gas- and biosensor applications

Peer-reviewed
Open access
DOI
10.17586/2220-8054-2018-9-1-95-97
2018

Antisites in silicon carbide

Peer-reviewed
Open access
DOI
10.1103/PhysRevB.57.6243
1998