New Insight into Single-Event Radiation Failure Mechanisms in Silicon Carbide Power Schottky Diodes and MOSFETs
Year of publication
2020
Authors
Witulski, Arthur F.; Ball, Dennis R.; Johnson, Robert A.; Galloway, Kenneth F.; Sternberg, Andrew L.; Alles, Michael L.; Reed, Robert A.; Schrimpf, Ronald D.; Hutson, John M.; Javanainen, Arto; Lauenstein, Jean-Marie; Grider, David; Lichtenwalner, Daniel J.; Raman, Ashok; Arslanbekov, Robert
Show moreAbstract
Ion-induced leakage current degradation, and single-event burnout may be manifestestations of the same device mechanisms in both silicon carbide power diodes and MOSFETs. In all cases there is a migration of the electrical field from the front body-drain interface to the back epi-drain n+ interface, with a peak exceeding the critical electric field of silicon carbide, causing avalanche generation which enables high short-duration power densities during an approximate 20 psec window after the ion strike. The degradation effect in JBS SiC diodes seems to be independent of the length of the epitaxial region for different voltage-rated diodes.
Show moreOrganizations and authors
Publication type
Publication format
Article
Parent publication type
Conference
Article type
Other article
Audience
ScientificPeer-reviewed
Peer-ReviewedMINEDU's publication type classification code
A4 Article in conference proceedingsPublication channel information
Journal
Parent publication name
ICSCRM 2019 : 18th International Conference on Silicon Carbide and Related Materials
Parent publication editors
Yano, Hiroshi; Ohshima, Takeshi; Eto, Kazuma; Harada, Shinsuke; Mitani, Takeshi; Tanaka, Yasunori
Publisher
Pages
1066-1073
ISSN
ISBN
Publication forum
Publication forum level
1
Open access
Open access in the publisher’s service
No
Self-archived
No
Other information
Fields of science
Physical sciences; Electronic, automation and communications engineering, electronics
Keywords
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Publication country
Switzerland
Internationality of the publisher
International
Language
English
International co-publication
Yes
Co-publication with a company
No
DOI
10.4028/www.scientific.net/MSF.1004.1066
The publication is included in the Ministry of Education and Culture’s Publication data collection
Yes