Effects of Heavy Ion and Proton Irradiation on a SLC NAND Flash Memory
Year of publication
2019
Authors
Luza, Lucas Matana; Bosser, Alexandre; Gupta, Viyas; Javanainen, Arto; Mohammadzadeh, Ali; Dilillo, Luigi
Abstract
Space applications frequently use flash memories for mass storage data. However, the technology applied in the memory array and peripheral circuity are not inherently radiation tolerant. This work introduces the results of radiation test campaigns with heavy ions and protons on a SLC NAND Flash. Static tests showed different failures types. Single events upsets and raw error cross sections were presented, as well as an evaluation of the occurrences of the events. Characterization of effects on the embedded data registers was also performed.
Show moreOrganizations and authors
Aalto University
Bosser Alexandre
University of Jyväskylä
Javanainen Arto 
Publication type
Publication format
Article
Parent publication type
Conference
Article type
Other article
Audience
ScientificPeer-reviewed
Peer-ReviewedMINEDU's publication type classification code
A4 Article in conference proceedingsPublication channel information
Journal/Series
Proceedings : IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems
Parent publication name
Conference
IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems
Publisher
Article number
8875475
ISSN
ISBN
Publication forum
Publication forum level
1
Open access
Open access in the publisher’s service
No
Self-archived
Yes
Other information
Fields of science
Physical sciences; Electronic, automation and communications engineering, electronics
Keywords
[object Object],[object Object],[object Object]
Internationality of the publisher
International
Language
English
International co-publication
Yes
Co-publication with a company
No
DOI
10.1109/DFT.2019.8875475
The publication is included in the Ministry of Education and Culture’s Publication data collection
Yes