Statistical Analysis of Heavy-Ion Induced Gate Rupture in Power MOSFETs—Methodology for Radiation Hardness Assurance
Year of publication
2012
Authors
Ferlet-Cavrois, V.; Binois, C.; Carvalho, A.; Ikeda, N.; Inoue, M.; Eisener, B.; Gamerith, S.; Chaumont, G.; Pintacuda, F.; Javanainen, Arto; Schwank, J.R.; Shaneyfelt, M.R.; Lauenstein, J.-M.; Ladbury, R.L.; Muschitiello, M.; Poivey, C.; Mohammadzadeh, A.
Organizations and authors
Publication type
Publication format
Article
Parent publication type
Journal
Article type
Original article
Audience
ScientificPeer-reviewed
Peer-ReviewedMINEDU's publication type classification code
A1 Journal article (refereed), original researchPublication channel information
Journal/Series
Publisher
Volume
59
Issue
6
Pages
2920-2929
ISSN
Publication forum
Publication forum level
1
Open access
Open access in the publisher’s service
No
Self-archived
No
Other information
Fields of science
Physical sciences
Publication country
United States
Internationality of the publisher
International
Language
English
International co-publication
Yes
Co-publication with a company
No
DOI
10.1109/TNS.2012.2223761
The publication is included in the Ministry of Education and Culture’s Publication data collection
Yes