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Heavy-Ion-Induced Defects in Degraded SiC Power MOSFETs

Year of publication

2023

Authors

Martinella, Corinna; Bathen, Marianne; Javanainen, Arto; Grossner, Ulrike

Abstract

Cathodoluminescence spectroscopy is used to investigate the formation of point- and extended defects in SiC power MOSFETs exposed to heavy-ions. Devices showing single event leakage current (SELC) effects are analysed and compared to pristine samples. Common luminescence peaks of defect centers localized in the thermal-SiO2 are identified, together with peaks at the characteristic wavelength of extended defects.
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Organizations and authors

University of Jyväskylä

Javanainen Arto Orcid -palvelun logo

Publication type

Publication format

Article

Parent publication type

Journal

Article type

Original article

Audience

Scientific

Peer-reviewed

Peer-Reviewed

MINEDU's publication type classification code

A1 Journal article (refereed), original research

Publication channel information

Journal

Materials Science Forum

Publisher

Trans Tech Publications

Volume

1090

Pages

179-184

ISSN

0255-5476

​Publication forum

62997

​Publication forum level

1

Open access

Open access in the publisher’s service

Yes

Open access of publication channel

Partially open publication channel

Self-archived

Yes

Other information

Fields of science

Physical sciences; Electronic, automation and communications engineering, electronics

Keywords

[object Object],[object Object],[object Object],[object Object],[object Object]

Publication country

Switzerland

Internationality of the publisher

International

Language

English

International co-publication

Yes

Co-publication with a company

No

DOI

10.4028/p-3y3lv4

The publication is included in the Ministry of Education and Culture’s Publication data collection

Yes